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ValueRam
Kingston Technology
Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3 1600 MT/s
Part number:
KVR16S11S8/4
Sale price
$24.69
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$25.00
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Key Features
- JEDEC 1.5V Power Supply
- VDDQ = 1.5V
- 800MHz fCK for 1600Mb/sec/pin
- 8 independent internal banks
- Programmable CAS latency: 11, 10, 9, 8, 7, 6, 5
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- 8-bit pre-fetch
- Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
- Bi-directional Differential Data Strobe
- Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
- Asynchronous Reset
- PCB: Height 1.180” (30.00mm), double sided component
Description
Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.Specifications
| Memory | |
|---|---|
| Package type | SO-DIMM |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| CAS latency | 11 |
| Memory voltage | 1.5 V |
| Memory bus | 64 bit |
| Lead plating | Gold |
| Module configuration | 512M X 64 |
| Row cycle time | 48.125 ns |
| Refresh row cycle time | 260 ns |
| Row active time | 35 ns |
| Memory ranking | 1 |
| ECC | No |
| Internal memory type | DDR3 |
| Power | |
| Memory voltage | 1.5 V |
| Technical details | |
| Memory layout | 1 x 4096 MB |
| Internal memory | 4096 MB |
| Chips organisation | X8 |
| Error indication | No |
| Country of origin | Taiwan |
| Bus clock rate | 1600 MHz |
| Features | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | Laptop |
| Memory form factor | 204-pin SO-DIMM |
| CAS latency | 11 |
| Memory voltage | 1.5 V |
| Memory bus | 64 bit |
| Lead plating | Gold |
| Module configuration | 512M X 64 |
| Row cycle time | 48.125 ns |
| Refresh row cycle time | 260 ns |
| Row active time | 35 ns |
| Country of origin | Taiwan |
| Memory ranking | 1 |
| ECC | No |
| Internal memory type | DDR3 |
| Harmonized System (HS) code | 84733020 |
| Memory data transfer rate | 1600 MT/s |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Weight & dimensions | |
| Width | 2.66" (67.6 mm) |
| Height | 1.18" (30 mm) |
| Package type | SO-DIMM |
| Packaging data | |
| Package type | SO-DIMM |
| Logistics data | |
| Harmonized System (HS) code | 84733020 |
| Other features | |
| Memory layout | 1 x 4096 MB |
| Internal memory | 4096 MB |
| Chips organisation | X8 |
| Error indication | No |
| Country of origin | Taiwan |
| Bus clock rate | 1600 MHz |
| Harmonized System (HS) code | 84733020 |