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2GB, DDR2-667, SO-DIMM, 200-pin, CL5, 128Mx8

Description

Description
The TS256MSQ64V6U-I is a 256M x 64bits DDR2-667 2Rank SO-DIMM. The TS256MSQ64V6U-I consists of 16pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS256MSQ64V6U-I is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Specifications

Power
Memory voltage	1.8 V
Design
Certification	RoHS
Memory
Memory layout (modules x size)	1 x 2 GB
Internal memory	2 GB
Component for	Laptop
Memory form factor	200-pin SO-DIMM
CAS latency	5
Memory voltage	1.8 V
Module configuration	128M x 8
Memory ranking	2
ECC	No
Memory clock speed	667 MHz
Internal memory type	DDR2
Features
Memory layout (modules x size)	1 x 2 GB
Internal memory	2 GB
Component for	Laptop
Memory form factor	200-pin SO-DIMM
CAS latency	5
Memory voltage	1.8 V
Module configuration	128M x 8
Certification	RoHS
Memory ranking	2
ECC	No
Memory clock speed	667 MHz
Internal memory type	DDR2
Operational conditions
Operating temperature (T-T)	-40 - 85 °C
Certificates
Certification	RoHS